Biography: Tayeb Mohammed-Brahim is currently emeritus professor in Rennes University (France) and invited professor in South-easy University Nanjing (China). He got his PhD (Doctorat d'Etat) in Paris-XI University (France). He founded the thin-film Laboratory in Algiers University (Algeria). Then he moved to Caen University (France) where he created the reliability Laboratory. After that, he moved to Rennes 1 University where he became the head of Microelectronics Group becoming the Microetecrronics and Microsensors Department. He was also the Director of Common Center on Microelectronics in the west of France. He was mainly involved in the field of thin film and nanowire devices based on amorphous, micro-poly crystalline Silicon films or organic films: Photovoltaic cells, Thin Film Transistors for flat panel displays and OLEDs, chemical and mechanical sensors. Presently, his main activity focuses on similar electronic devices, fabricated by additive process however.
Speech Title: Flexible Electronic Devices
Today’s world is invaded by new real or fictitious needs in the fields of health, sport or communication. People want to know in real time their health, the weather, the traffic etc...Such needs created a huge market. Most of these new devices have to be conformable. In this way, flexible electronics becomes a major research domain. Flexible electronics joins both needs of conformability and low cost devices.
The talk will present some old and new used technologies to fabricate flexible devices and the materials able to be conformable. Some materials and devices will be shown as an example of the possibilities of these technologies.
Byung Seong Bae received his Bachelor of Science degree in atomic nuclear engineering from Seoul National University, Seoul, Korea in 1984, followed by a Master of Science and Ph.D. in applied physics from the Korea Advanced Institute of Science and Technology, Seoul, in 1986 and 1991, respectively. After completing his doctoral studies, he worked at Samsung Electronics between 1991 and 1998, where he played a role in the development of amorphous and poly-silicon TFT LCDs with integrated drivers. From 1999 to 2003, he set up the high-temperature poly-silicon TFT LCD factory and developed a micro-display for projection display at ILJIN Display. Since 2006, he has been a Professor at Hoseo University, Asan, Korea, where he has continued to pursue his research interests in thin‐film devices, flat panel displays, sensors, and drive circuits by thin film transistors.
Speech Title: Pixel Circuit Design for X-ray Detection Utilizing a-IGZO Thin-Film Transistors
In recent advancements, X-ray detectors have experienced notable strides. Active pixel sensors exhibit superior Signal-to-Noise Ratio (SNR) compared to passive counterparts. Our research introduces and verifies a novel pixel circuit tailored for high-resolution X-ray detectors via comprehensive simulation. Our objective is to seamlessly integrate Thin-Film Transistors (TFTs) with detectors, thereby enhancing circuit efficacy and ultimately augmenting X-ray detection capabilities across diverse domains.
Biography: Prof. Damian C Onwudiwe is a Professor and the Group Leader of the Inorganic and Materials Chemistry Research Group of the North-West University, South Africa. He is an Extra-ordinary Professor, at the Institute for Nanotechnology and Water Sustainability, iNanoWS, University of South Africa, and an Adjunct Faculty member in the Department of Applied Chemistry and Chemical Engineering at the University of Chittagong, Bangladesh. His area of research encompasses Inorganic synthesis and the engineering of nanostructured materials for environmental application. He has published several book chapters and research papers on diverse aspects of Inorganic and Materials Chemistry and has a H-index of 42. He is a recipient of different international research travel awards including a TWAS-DFG Fellowship as a Visiting Scientist at the University of Cologne, Germany; the UK Royal Society of Chemistry (RSC) Research Fellowship to Kings College London, UK; and the Institutional Capacity Development Grant (UCDG) to the National Centre of Research in Materials Science, Tunisia. Prof. Onwudiwe is the Principal Investigator of different projects and has collaborations at both national and international levels. He is a college member of the International Development Peer Review of the United Kingdom Research Initiative (UKRI) and a National Research Foundation (NRF) of South Africa Rated Researcher in the C2 category. In addition, Prof Onwudiwe is an Associate Editor of the Heliyon-Materials section and an Editorial Board member of Frontiers in Materials, Results in Surfaces and Interfaces, and Catalysts.
Speech Title: Opto-electronic and Structural Properties of α-Fe2O3 Doped with Zn Ion for Possible Use in Photodetector Application
Photodetectors find diverse applications across scientific, military, and industrial fields. Consequently, these detectors must have high responsiveness and cost-effective production process. In this study, changes in the optical and structural properties of α-Fe2O3 nanoparticles were achieved by doping with Zn ion without any topotactic transformation. The success of this process was monitored using optical spectroscopy and X-ray diffraction analysis, which revealed the evolution of improved optical and electronic structures with no associated transformation to other oxides of iron or several easily interchangeable phases of Fe2O3. Structural parameters for varying weight percentages of Zn doped iron oxide at 700, 800, and 900 °C were determined using different models. The difference between the crystallite size of nanoparticles obtained from the Scherrer’s method and other models was attributed to the ignorance of microstrain contribution by the Scherrer’s method, which arises from the lattice imperfection. Analysis of I-V characteristics demonstrates that the electrical conductivity increases with the introduction of dopant ions, attributed to a reduction in electron-hole recombination. These modified opto-electronic properties of the prepared Fe2O3 by doping with Zn ion make it suitable candidate for possible use in photodetector application.
Prof. Dr. Mehmet Ertugrul was born in Trabzon, Turkey, in 1966. He received the B.Sc. degree from the Department of Physics, in 1986, and the M.Sc. and Ph.D. degrees in physics, in 1990 and 1994, respectively. From 1994 to 1996, 1996 to 2001, and 2001—2002, he was, respectively, an Assistant Professor, an Associate Professor, and a Full Professor at the Department of Physics, Ataturk University, where he has been a Full Professor at the Department of Electrical and Electronics Engineering since 2003. He is the author or co-author of more than 200 papers published in international journals and also over 200 publications in national and international conference proceedings. His current research interests include carbon nanostructures and composites, energy storage systems employing 2D structures such as graphene, dichalcogenides and MXenes, biomedical and gas sensors, ultraconducting and superconducting cables, covetics, radar absorber materials, superconducting and semiconducting devices. He worked as a visiting scientist at Oak Ridge National Laboratory between 2001-2003, 2005-2006, and 2008-2009. He has been working as a visiting profffessor at University Putra Malaysia (UPM) since 2019. Prof. Ertugrul has received several awards such as Encouragement award by The Scientific and Research Council of Turkey (TUBITAK), The Successful Young Scientists Award by the Turkish Academy of Sciences, and the best project award. He was also awarded with NATO-C scholarship in 2001 and TUBITAK scholarship in 2009. He has served as a supervisor to many masters and PhD students. He has worked for several committees such as the Higher Education Council, The Scientific and Research Council, The Ministry of Science, Technology and Industry of Turkey.
Speech Title: Pixel Circuit Design for X-ray Detection Utilizing a-IGZO Thin-Film Transistors
Ambipolarity has become important for many applications in recent years. In addition to device fabrication from materials with ambipolar behavior, many factors such as the controllability of ambipolarity and the degree of ambipolarity have attracted the attention of researchers. Many factors causing ambipolarity have been reported in the literature. Especially, 2D dicalgonites such as WS2 and MoS2 are the leading materials for FET devices with ambipolar behavior. Besides the properties of these 2D materials, the geometry of the device also has an effect on ambipolarity. In this study, the effect of geometric properties of the FET device, such as channel thickness, on ambipolarity was investigated. For the FET device, it was seen that the instability starts from a few layers of channel thickness and then decreases again as the thickness increases. It was observed that as the thickness increased, the degree of ambipolarity approached zero. The degree of ambipolarity approaching zero indicates that the WS2 channel exhibits natural n-type behavior and the ambipolar effect disappears.
Yeon Hee Kim, received his Bachelor of Science degree in Industrial safety engineering from Hoseo University, Chen An, Korea in 1988, followed by a Master of Science applied Electrical engineering from the Han Yang University, Seoul. in 2000 and Ph.D. in Safety engineering from the Hoseo University, in 2006, respectively. After completing his doctoral studies, he worked at DaeWoo International between 1992 and 2005. Since 2006, he has been a Professor at Hoseo University, Asan, Korea, where he has conducted research on system stabilization, is studying prediction and classification through artificial intelligence, and is conducting various studies such as creating a prediction system for the form and outcome of learning.
Speech Title: Fabrication Technology of Flexible Solar Module Using Roll Transfer Equipment
In this study, we develop a roll transfer device that transfers thin solar devices to a PCB by moving the devices using a film. The applied roll transfer devices can transfer wafers up to 12 inches to a PCB at once, so it is the first research devices in Korea that can be used to make flexible semiconductor products, flexible solar products, and X-ray Detector can be used to create curved shapes. All semiconductor products using silicon have bending characteristics when back-grinded to a thickness of 50μm, so if the packaging process is performed to maintain these flexible characteristics, the final semiconductor product can maintain its curved surface and have unique semiconductor performance. Therefore, it is possible to embed semiconductors in all products, so that it is possible to implement general products as smart products. In this study, flexible solar modules were successfully implemented using roll transfer devices and continuous research will be conducted to implement flexible semiconductor products in various fields.
Takashi Noguchi received M.S. degree in 1979 and Ph.D. in 1992 from Doshisha University. In 1979, he joined Sony Corp., and contributed in R & D on Si MOS LSIs as well as Si TFTs (LTPS). In1994, he stayed in MIT as a visiting scientist. In 1998, he managed a research on novel Si devices in Sony Research Center. In 2001, he moved to France as a research scientist of CNRS in Universite Paris-Sud. In 2002, he moved to Korea and he managed two research projects as an executive member in SAIT, and also contributed in SungKyunKwan University. After 2006, he has contributed as a professor in University of the Ryukyus in Japan. After April 2019, he is a professor emeritus in Univ. of the Ryukyus.
Speech Title: Low temperuture Si TFT for Low-cost FPD
Sputtered deposition can lower the deposition temperature of a-Si film near R.T. than conventional CVD technique. By sputtered Si film, in general, Ar gas is adopted as a sputtering gas. Incorporated Ar atoms into Si network disturbs the subsequent crystallization using ELA. To apply the sputtered amorphous Si films to poly Si TFTs for FPD on low-cost polymer, Another rare gas instead of Ar is effective as the sputtering gas. After subsequent effective laser crystallization, the TFT fabrication can be conducted below 400◦C. By ultra-LTPS TFT on low-cost polymer is described.
Prof. Ts. Dr. Suhaidi Shafie received the Bachelor of Engineering (Electrical and Electronics) from University of the Ryukyus, Japan in 2000. From 2000 to 2002, he was with ALPS Electric (M) Sdn. Bhd. as a Design Engineer. He received the Master of Engineering (Electrical and Electronics) from Tokyo University of Agriculture and Technology, and the Doctor of Engineering (Nanovision) from Shizuoka University in 2005 and 2008, respectively. He is currently the Department Head of Electrical and Electronic Engineering and a Full Professor in Universiti Putra Malaysia. Dr. Suhaidi research works are in the field of optical devices, circuits and systems including Solar Cell, Solar Photovoltaic, Sensors and Analog IC interfacing circuits. He was the Head of Functional Devices Laboratory, Institute of advanced Technology, Universiti Putra Malaysia From 2015 to 2021. He was the chapter chair of IEEE Circuits and Systems Society Malaysia Chapter for 2017 and 2018. He is a Professional Engineer and Professional Technologies certified by Board of Engineer Malaysia and Malaysian Board of Technologist, respectively.
Speech Title: SPICE Simulation Assisted-Dynamic RDS(ON) Characterization in 200V Commercial Schottky p-GaN HEMTs Under Unstable Phases
This paper presents a comprehensive analysis of dynamic and static RDS(ON) in Schottky p-GaN High Electron Mobility Transistors (HEMTs), highlighting the impact of off-state and hot electron trapping on device performance. The authors observed significant hysteresis in the transfer characteristics of a 200V commercial Schottky p-GaN, attributing this to charge trapping effects. A novel experimental setup, employing a multi-pulse test synchronous buck converter circuit with additional gate control and a clamping circuit, enabled precise characterization of dynamic RDS(ON) under varying conditions, including unstable phases with overcurrent. This method effectively mimics solar PV input scenarios, exposing the device to high dv/dt and di/dt stresses, which are critical for evaluating GaN device stability under transient conditions. This research also reveals that increased gate resistance reduces energy losses, challenging traditional expectations by demonstrating the nuanced gate charge dynamics of GaN HEMTs. This study overall contributes to the understanding of GaN device behavior, offering a novel approach for accurately characterizing dynamic RDS(ON) under unstable stages, furtherly advances the GaN device in complex renewable energy power converter applications.
Hiroshi Kageyama obtained his B.Eng. (1992), M.Eng. (1994), and Ph.D. (1997) degrees from Osaka University (Japan). He was appointed to be Research Associate at Osaka University in 1997 and Assistant Professor in 2006. Since 2011, he has been Associate Professor at University of the Ryukyus (Japan). He is interested in organic optoelectronic devices.
Speech Title: Magnesium Oxide Formed by a Thermite Reaction of Molybdenum Oxide with Thermally-deposited Magnesium as Acathode Interlayer Material in Organic Solar Cells
Development of interlayer materials that controls of the interface between organicactive layer and electrode is of crucial importance for improving the performance of organicsolar cells (OSCs). Metal oxides, such as titanium oxide, zinc oxide, magnesium oxide (MgO)and so on, are a class of promising candidates for cathode interlayer materials (CIMs). Metaloxide films are usually fabricated by sputter deposition, atomic-layer deposition, sol-gelmethods, and spin-coating methods. In this study, a new method of fabricating the MgO filmsusing a thermite reaction of molybdenum oxide with thermally-deposited magnesium wasproposed and performance of OSCs using the MgO-CIM was evaluated. It was found that theincorporation of the MgO-CIM reduces series resistance and suppresses the reduction of fillfactors and open-circuit voltages, thus improves the power conversion efficiencies. It was alsofound that the MgO-CIM enables the fabrication of semi-transparent OSCs using a high workfunction metal of gold as a cathode metal.
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